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General Information
Prof. T. Hikmet Karakoc
Anadolu University, Faculty of Aeronautics and Astronautics, Turkey

IJET 2010 Vol.2(5): 418-422 ISSN: 1793-8236
DOI: 10.7763/IJET.2010.V2.158

Experimental Analysis of Parameter Limitations in High-Frequency Resonant Gate Driver

N. Z. Yahaya, K. M. Begam and M. Awan

Abstract—In megahertz switching frequency, the effect of loss is significant. In diode-clamped resonant gate driver circuit, the resonant inductor current, duty ratio and dead time are the limiting parameters which bring implications to the switching loss and hence total gate drive loss. The experimental analysis has been carried out to validate the simulation results. From the predetermined inductor current of 9 nH, duty ratio of 20 % and dead time of 15 ns, remarkably, the experimental results show less than 10 % difference in value compared to the simulation. Therefore, this new finding validates that by using correct choice of these values, the diode-clamped resonant gate driver can operate better in higher switching frequency.

Index Terms—High Frequency, Limiting Parameters, Resonant Gate Drive, Switching Loss.

N. Z. Yahaya is with Universiti Teknologi PETRONAS, Malaysia. Currently he is expecting to sit for the PhD viva. His main PhD work concentrates on the development of power electronics module in high frequency system (phone: 605-368-7823; fax: 605-365-7443; email:norzaihar_yahaya@petronas.com.my).
K. M. Begam is a lecturer specializing in Physics and battery design. Currently she is attached with Universiti Teknologi PETRONAS, Malaysia (e-mail: mumtajbegam@petronas.com.my).
M. Awan is with the Electrical Engineering Department, Universiti Teknologi PETRONAS, Malaysia. His research interest is in the area of Analog IC Circuit Design (e-mail: mohdawan@petronas.com.my).


Cite: N. Z. Yahaya, K. M. Begam and M. Awan, "Experimental Analysis of Parameter Limitations in High-Frequency Resonant Gate Driver," International Journal of Engineering and Technology vol. 2, no. 5, pp. 418-422, 2010.

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