doi: 10.7763/IJET.2012.V4.435
A New Approach to Valence and Conduction Band Grading in CIGS Thin Film Solar Cells
Nima E. Gorji
,
Mauricio D. Perez
,
Ugo Reggiani
,
Leonardo Sandrolini
- the Department of Electrical Engineering, Alma Mater Studiorum-University of Bologna, Bologna, Italy
Abstract
In this paper the characteristics of the graded band gap profiles of CIGS thin film solar cells are reviewed. Influence of the valence and conduction band grading of the absorber material on the main parameters of the cell is considered. A new graded band gap profile which exploits the widening of both the valence and conduction bands is proposed. Furthermore, the possibility of conduction band grading of the window material near the surface region to enhance the carrier transfer is discussed.
Keywords
- Band gap grading
- CIGS thin film solar cell
- performance enhancement
- valence band offset
How to Cite
Nima E. Gorji, Mauricio D. Perez, Ugo Reggiani, and Leonardo Sandrolini, "A New Approach to Valence and Conduction Band Grading in CIGS Thin Film Solar Cells," International Journal of Engineering and Technology, vol. 4, no. 5, pp. 573-576, 2012. https://doi.org/ 10.7763/IJET.2012.V4.435
Copyright & License
Copyright © 2012 by the authors. This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).