doi: 10.7763/IJET.2010.V2.158
Experimental Analysis of Parameter Limitations in High-Frequency Resonant Gate Driver
- 1 specializing in Physics and battery design
- 2 the
Abstract
In megahertz switching frequency, the effect of loss is significant. In diode-clamped resonant gate driver circuit, the resonant inductor current, duty ratio and dead time are the limiting parameters which bring implications to the switching loss and hence total gate drive loss. The experimental analysis has been carried out to validate the simulation results. From the predetermined inductor current of 9 nH, duty ratio of 20 % and dead time of 15 ns, remarkably, the experimental results show less than 10 % difference in value compared to the simulation. Therefore, this new finding validates that by using correct choice of these values, the diode-clamped resonant gate driver can operate better in higher switching frequency.
Keywords
- High Frequency
- Limiting Parameters
- Resonant Gate Drive
- Switching Loss
How to Cite
K. M. Begam and M. Awan, "Experimental Analysis of Parameter Limitations in High-Frequency Resonant Gate Driver," International Journal of Engineering and Technology, vol. 2, no. 5, pp. 418-422, 2010. https://doi.org/ 10.7763/IJET.2010.V2.158
Copyright & License
Copyright © 2010 by the authors. This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).