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General Information
    • ISSN: 1793-8236 (Online)
    • Abbreviated Title Int. J. Eng. Technol.
    • Frequency:  Quarterly 
    • DOI: 10.7763/IJET
    • Executive Editor: Ms.Yoyo Y. Zhou
    • Abstracting/ Indexing: Chemical Abstracts Services (CAS) EBSCO, Google Scholar, Ulrich Periodicals Directory, Crossref, ProQuest, Index CopernicusINSPEC.
    • E-mail: ijet@vip.163.com
Editor-in-chief
Prof. T. Hikmet Karakoc
Anadolu University, Faculty of Aeronautics and Astronautics, Turkey

IJET 2012 Vol.4(5): 573-576 ISSN: 1793-8244
DOI: 10.7763/IJET.2012.V4.435

A New Approach to Valence and Conduction Band Grading in CIGS Thin Film Solar Cells

Nima E. Gorji, Mauricio D. Perez, Ugo Reggiani, and Leonardo Sandrolini
Abstract—In this paper the characteristics of the graded band gap profiles of CIGS thin film solar cells are reviewed. Influence of the valence and conduction band grading of the absorber material on the main parameters of the cell is considered. A new graded band gap profile which exploits the widening of both the valence and conduction bands is proposed. Furthermore, the possibility of conduction band grading of the window material near the surface region to enhance the carrier transfer is discussed.

Index Terms—Band gap grading, CIGS thin film solar cell, performance enhancement, valence band offset.

The authors are with the Department of Electrical Engineering, Alma Mater Studiorum-University of Bologna, Bologna, Italy (e-mail: nima.eshaghigorji2@unibo.it, mauriciodavid.perez2@unibo.it, ugo.reggiani@unibo.it, leonardo.sandrolini@unibo.it).

[PDF]

Cite: Nima E. Gorji, Mauricio D. Perez, Ugo Reggiani, and Leonardo Sandrolini, "A New Approach to Valence and Conduction Band Grading in CIGS Thin Film Solar Cells," International Journal of Engineering and Technology vol. 4, no. 5, pp. 573-576, 2012.
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