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General Information
    • ISSN: 1793-8236 (Online)
    • Abbreviated Title Int. J. Eng. Technol.
    • Frequency:  Quarterly 
    • DOI: 10.7763/IJET
    • Managing Editor: Ms. Jennifer Zeng
    • Abstracting/ Indexing: Inspec (IET), CNKI Google Scholar, EBSCO, ProQuest, Crossref, etc.
    • E-mail: ijet_Editor@126.com
Editor-in-chief
IJET 2010 Vol.2(4): 390-393 ISSN: 1793-8236
DOI: 10.7763/IJET.2010.V2.153

Modified CMOS Positive Current Conveyor Based True RC Sinusoidal Oscillator

Anil Kumar Sharma and Dipankar Pal

Abstract—In this paper a modified CMOS positive second-generation current conveyor (CCII+) based resistance-capacitance (RC) Sinusoidal Oscillator operating over a wide frequency range is described. The proposed circuit consists of two CCII+, two buffers, four resistors and two capacitors. The oscillation conditions and the frequency of oscillations can be adjusted independently by two control resistors. Though the CCII’s are available from commercial monolithic IC’s viz. AD 844, PA 630, PA 630A and CCII01, but user doesn’t have the access to control high frequency response, linear current gain, large output impedance, current biasing etc, in the basic internal circuit. The designed RC oscillator is desirable for VLSI realization. The power supply voltage used in the circuit were balanced and adjusted to Vdd = + 2.5V and VSS = -2.5 V. The output waveforms presented and the results discussed in the paper are the simulated outcomes of the proposed circuit, carried out using CADENCE and Or CAD Version-10 software.

Index Terms—Frequency spectrum, Millers Compensation Capacitor, Op. Amp., Positive Current Conveyor.

Anil Kumar Sharma is with the Department of E.C.E., I.E.T., Alwar,Raj.-301030, India . E-mail: aks_826@yahoo.co.in
Dipankar Pal is the professor and Principal, B. C. Roy Engineering College, Durgapur, West Bengal-713206, India. E-mail: dpal61@gmail.com

[PDF]

Cite: Anil Kumar Sharma and Dipankar Pal, "Modified CMOS Positive Current Conveyor Based True RC Sinusoidal Oscillator," International Journal of Engineering and Technology vol. 2, no. 4, pp. 390-393, 2010.

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